Infineon BSC036NE7NS3G: High-Performance 30V OptiMOS 5 Power MOSFET

In the realm of power electronics, efficiency, thermal performance, and reliability are paramount. The Infineon BSC036NE7NS3G stands out as a premier solution, embodying the advanced OptiMOS™ 5 technology to deliver exceptional performance in a compact package. This 30V N-channel power MOSFET is engineered to meet the rigorous demands of modern applications, from server and telecom power supplies to high-frequency DC-DC converters and motor drives.

At the heart of this device is its ultra-low on-resistance (RDS(on)), which is as low as 3.6 mΩ maximum at 10 V. This remarkably low resistance minimizes conduction losses, leading to higher efficiency and reduced heat generation. The reduced power dissipation allows systems to operate cooler, enhancing longevity and reliability. Furthermore, the BSC036NE7NS3G features an outstanding gate charge (Qg) and figure of merit (FOM), which significantly lowers switching losses. This makes it exceptionally suitable for high-frequency switching operations, enabling designers to create smaller, more power-dense solutions without compromising performance.

The MOSFET is housed in an Infineon’s SuperSO8 package, which offers an excellent power-to-size ratio. Despite its small footprint, the package is designed for superior thermal performance, efficiently transferring heat away from the silicon die. This robust thermal capability ensures stable operation even under high-stress conditions. Additionally, the device provides enhanced avalanche ruggedness, offering greater resilience against voltage spikes and unexpected transients in demanding environments.

Another critical advantage is its high operational reliability, backed by Infineon’s stringent quality standards. The OptiMOS 5 technology also contributes to a reduced carbon footprint, as higher efficiency directly translates to lower energy consumption in end applications, supporting global sustainability goals.

ICGOOODFIND: The Infineon BSC036NE7NS3G is a top-tier 30V power MOSFET that sets a high benchmark with its ultra-low RDS(on), excellent switching characteristics, and robust thermal performance. It is an ideal choice for engineers aiming to maximize efficiency and power density in next-generation power systems.

Keywords: OptiMOS 5, Low RDS(on), High Efficiency, SuperSO8 Package, Power Density.