Infineon IPD65R660CFDA: A 650V CoolMOS™ CFD7 Power Transistor for High-Efficiency Switching Applications

The relentless pursuit of higher efficiency and power density in modern electronics drives continuous innovation in power semiconductor technology. At the forefront of this evolution is Infineon's IPD65R660CFDA, a 650V superjunction MOSFET from the revolutionary CoolMOS™ CFD7 family. This device is engineered to set new benchmarks in performance for a wide array of high-efficiency switching applications, including server and telecom SMPS, industrial motor drives, solar inverters, and EV charging infrastructure.

A defining characteristic of the CFD7 series is its integrated fast body diode. The IPD65R660CFDA leverages this feature to deliver exceptional hard and soft switching performance. This is particularly critical in topologies like totem-pole PFC and phase-shifted full-bridge converters, where the body diode's reverse recovery behavior directly impacts overall efficiency and electromagnetic interference (EMI). The device's superior reverse recovery charge (Qrr) and softness factor ensure lower switching losses and reduced stress on the system.

Beyond its advanced diode, the IPD65R660CFDA boasts an ultra-low figure-of-merit (RDS(on) x QG). With a maximum on-state resistance of just 66 mΩ and optimized gate charge (QG), it achieves an optimal balance between conduction and switching losses. This translates to cooler operation, higher switching frequencies, and the potential for designers to reduce the size of magnetics and heat sinks, thereby increasing overall power density.

The platform also offers enhanced usability and robustness. Features such as a high dv/dt capability and improved parameter linearity provide greater design flexibility and margin. Furthermore, the high avalanche ruggedness and 100% automated test during production guarantee maximum reliability and longevity in demanding operational environments, ensuring system stability.

ICGOOODFIND: The Infineon IPD65R660CFDA is a pinnacle of power transistor design, masterfully combining the game-changing integrated fast diode of the CoolMOS™ CFD7 series with an ultra-low FOM. It is a key enabler for engineers striving to push the boundaries of efficiency, power density, and reliability in next-generation power conversion systems.

Keywords: CoolMOS™ CFD7, High-Efficiency Switching, Integrated Fast Body Diode, Ultra-Low RDS(on), High Power Density