Infineon IPT60R028G7XTMA1: A High-Performance 600V CoolMOS™ G7 Power Transistor

The relentless pursuit of higher efficiency and power density in modern electronics has driven significant innovation in power semiconductor technology. At the forefront of this evolution is Infineon's latest generation of superjunction MOSFETs, exemplified by the IPT60R028G7XTMA1. This 600V CoolMOS™ G7 power transistor sets a new benchmark for performance, offering engineers a superior component for demanding applications such as server and telecom SMPS, industrial motor drives, and solar inverters.

A defining characteristic of the CoolMOS™ G7 series is its exceptionally low figure-of-merit (R DS(on) x Q G). The IPT60R028G7XTMA1 boasts a maximum on-state resistance of just 28 mΩ, significantly reducing conduction losses. This is complemented by industry-leading switching performance, which minimizes both turn-on and turn-off losses. The result is a device that operates at higher switching frequencies with markedly improved thermal behavior, enabling designers to create smaller, lighter, and more efficient power systems.

Beyond raw performance metrics, this transistor incorporates several features that enhance system robustness and reliability. It offers superior body diode ruggedness, allowing for greater tolerance in hard-switching and inductive load conditions. Furthermore, the G7 technology provides a very high level of dv/dt stability, ensuring safe and predictable operation by mitigating the risk of parasitic turn-on events. This combination of ruggedness and stability makes it an ideal choice for harsh operating environments.

The component is offered in the proven TOLL (TO-leadless) package, which strikes an optimal balance between performance and board space. Its compact form factor and low-profile design facilitate better thermal management to the PCB, further supporting high-power-density designs. The package also features a low stray inductance, which is crucial for preserving the excellent switching characteristics of the silicon.

ICGOODFIND: The Infineon IPT60R028G7XTMA1 represents a significant leap forward in high-voltage power switching. By masterfully balancing ultra-low conduction losses, fast switching capability, and exceptional ruggedness, it provides a critical enabling technology for the next generation of efficient and compact power conversion systems.

Keywords: High Efficiency, Superjunction MOSFET, Low On-Resistance, Fast Switching, Power Density.