Infineon BSC098N10NS5ATMA1 OptiMOS™ 5 100V Power MOSFET for High-Efficiency Power Conversion
The relentless pursuit of higher efficiency and power density in modern electronic systems places immense demands on power switching components. Addressing this challenge, the Infineon BSC098N10NS5ATMA1, a member of the advanced OptiMOS™ 5 100V family, stands out as a premier solution for designers of high-performance power conversion circuits. This N-channel MOSFET is engineered to deliver exceptional efficiency, robustness, and reliability in a wide array of applications, from server and telecom power supplies to industrial motor drives and solar inverters.
A cornerstone of this device's performance is its superior figure-of-merit (FOM), which strikes an optimal balance between low gate charge (Qg) and low on-state resistance (RDS(on)). With a maximum RDS(on) of just 9.8 mΩ, the BSC098N10NS5 significantly reduces conduction losses. This allows for more current to be handled with minimal voltage drop and heat generation. Concurrently, the low gate charge ensures swift switching transitions, which is critical for operating at higher frequencies. Faster switching directly minimizes switching losses, a primary source of inefficiency in switch-mode power supplies (SMPS). This combination enables systems to achieve peak efficiency levels above 97%, facilitating cooler operation and reducing the need for large heatsinks and complex thermal management.
The benefits extend beyond raw electrical characteristics. The OptiMOS™ 5 technology is renowned for its high body diode robustness, offering excellent performance in hard-switching and commutating conditions. This enhances the MOSFET's resilience against voltage spikes and other stressful events commonly encountered in real-world applications, thereby improving overall system reliability. Furthermore, the device is housed in a SuperSO8 package, which provides a compact footprint while offering superior thermal performance compared to standard SO-8 packages. This leads to a higher power density, allowing engineers to design smaller, more compact end-products without sacrificing performance.
Designed with sustainability in mind, the efficiency gains provided by the BSC098N10NS5 contribute directly to lower energy consumption in data centers, communication infrastructure, and other energy-intensive systems. This aligns with global initiatives aimed at reducing the carbon footprint of electronic equipment.
ICGOOODFIND: The Infineon BSC098N10NS5ATMA1 OptiMOS™ 5 100V MOSFET is a high-efficiency powerhouse that excels in reducing both conduction and switching losses. Its optimal blend of ultra-low RDS(on) and low gate charge enables compact, high-frequency, and highly efficient power conversion designs, making it an superior choice for next-generation power systems.
Keywords: High Efficiency, Low RDS(on), OptiMOS™ 5, Power MOSFET, Fast Switching
