Infineon IPB180N06S4-H1: High-Performance OptiMOS Power MOSFET for Automotive and Industrial Applications
The relentless push for higher efficiency, greater power density, and enhanced reliability in power electronics is a defining trend across the automotive and industrial sectors. Meeting these demanding requirements necessitates advanced semiconductor components capable of superior switching performance and robust operation. The Infineon IPB180N06S4-H1 stands out as a prime example of such a component, engineered to deliver exceptional performance in a wide array of applications.
As part of Infineon's esteemed OptiMOS™ power MOSFET family, the IPB180N06S4-H1 is built upon an advanced trench technology platform. This technology is the cornerstone of its impressive characteristics, most notably an extremely low typical on-state resistance (R DS(on)) of just 1.8 mΩ. This minimal resistance is a critical factor, as it directly translates to reduced conduction losses. For end applications, this means higher overall system efficiency, less wasted energy dissipated as heat, and the potential for smaller, more compact thermal management solutions.
The device is rated for a drain-source voltage (V DS) of 60 V and a continuous drain current (I D) of 180 A, making it exceptionally suited for high-current switching tasks. This robust current handling capability is vital for demanding automotive environments, where it can be deployed in applications such as electric power steering (EPS) systems, braking systems, and DC-DC converters within hybrid and electric vehicles. Furthermore, its high performance is invaluable in industrial settings, including power supplies, motor drives, and solar inverters, where efficiency and reliability are paramount.
A key attribute of the IPB180N06S4-H1 is its optimized switching behavior. The MOSFET exhibits low gate charge (Q G) and low reverse recovery charge (Q rr), which collectively contribute to minimized switching losses. This allows for operation at higher frequencies, enabling designers to reduce the size of passive components like inductors and capacitors, thereby increasing power density.
Packaged in the robust PG-TO263-7 (D2PAK), the device offers an excellent power-to-footprint ratio and outstanding thermal performance. The package is designed for automated assembly and provides high mechanical robustness, which is essential for the harsh operating conditions found in automotive applications, including significant temperature fluctuations and vibrations.
ICGOO In summary, the Infineon IPB180N06S4-H1 OptiMOS power MOSFET is a high-performance solution that addresses the core challenges of modern power design. Its combination of ultra-low R DS(on), high current capability, fast switching speed, and automotive-grade robustness makes it an ideal choice for engineers striving to create more efficient, powerful, and reliable systems in both the automotive and industrial markets.
Keywords: OptiMOS™, Low R DS(on), Automotive Grade, High Current, Power Efficiency.
