Infineon IPD048N06L3G: A 60 V, 8 mΩ OptiMOS 5 Power MOSFET

In the realm of power electronics, efficiency, thermal performance, and reliability are paramount. The Infineon IPD048N06L3G stands out as a premier solution, engineered to meet the rigorous demands of modern automotive and industrial applications. As part of Infineon’s esteemed OptiMOS™ 5 power MOSFET family, this device combines ultra-low on-state resistance with superior switching characteristics, making it an ideal choice for high-performance systems.

One of the most impressive features of the IPD048N06L3G is its extremely low typical RDS(on) of just 0.8 mΩ at a 10 V gate drive. This remarkably low resistance minimizes conduction losses, leading to higher efficiency and reduced heat generation. The MOSFET is rated for 60 V drain-source voltage, providing ample headroom for 12 V and 24 V automotive systems, including applications like electric power steering (EPS), braking systems, and DC-DC converters.

The device is housed in a SuperSO8 package, which offers an excellent power-to-size ratio. This compact footprint allows for high power density designs without compromising thermal performance. The package’s superior thermal characteristics ensure that the MOSFET can handle high continuous and pulsed currents, enhancing system reliability under stressful operating conditions.

Furthermore, the OptiMOS™ 5 technology delivers outstanding switching performance, which is critical for high-frequency operation. This results in lower switching losses and enables designers to push the boundaries of efficiency in their power conversion stages. The combination of low RDS(on) and fast switching makes the IPD048N06L3G particularly suitable for high-current motor drive and load switch applications.

Another key advantage is its AEC-Q101 qualification, confirming its robustness and suitability for automotive environments. This ensures compliance with the stringent quality and reliability standards required in the automotive industry.

ICGOODFIND: The Infineon IPD048N06L3G OptiMOS™ 5 power MOSFET sets a high benchmark with its ultra-low 0.8 mΩ RDS(on), excellent thermal performance in a SuperSO8 package, and robust 60 V rating. It is an optimal component for enhancing efficiency and power density in demanding automotive and industrial power systems.

Keywords:

Power MOSFET

Ultra-low RDS(on)

OptiMOS™ 5

Automotive Grade

SuperSO8 Package